Phone: +91 9032 86 3660
+91 877 080 1335
Boddepalli SanthiBhushan (Shant)
I have obtained the Ph.D. degree in April 2019 from ABV - Indian Institute of Information Technology and Management, Gwalior, India.
Ph.D in Nano-Electronics, "Aromatic Materials for Supercapacitor Electrodes and Single Electron Devices", 2015-2019, ABV-Indian Institute of Information Technology and Management, Gwalior. (Supervisor: Prof. Anurag Srivastava)
M.Tech in VLSI Design, 2011-2013, ABV-Indian Institute of Information Technology and Management, Gwalior.
B.Tech in Electronics and Communications Engineering, 2006-2010, Jawaharlal Nehru Technological University, Kakinada, India.
Post-Doctoral Fellow, Nov 2019 - Present, Indian Institute of Technology, Bombay.
Assistant Professor, July 2019 - Nov 2019, Indian Institute of Information Technology Bhopal.
Junior Research Fellow, 2014-2015, ABV-Indian Institute of Information Technology and Management Gwalior.
Teaching Assistant, 2011-2013 & 2015-2019, ABV-Indian Institute of Information Technology and Management Gwalior.
Fellowships & Achievements-
International Travel Grant awarded by Science and Engineering Research Board (SERB), Government of India under Young Scientist Category to attend IEEE-NEMS 2018 conference at Singapore from April 22-26, 2018.
GATE fellowship (2011-2013) in Electronics and Communications Engineering by Ministry of Human Resource Development.
Junior Research Fellowship (2014-2015) by Department of Atomic Energy - BRNS, Government of India.
UGC-National Eligibility Test (NET) for Assistant Professor qualified.
Merit prize for my research work at International conference ICAN-2019, ABV-IIITM Gwalior.
Merit prize for my research work at International conference IWCCMP-2014, ABV-IIITM Gwalior.
Merit prize for my research work at National symposium NSETMPT-2014, Amity University Gwalior.
Merit prize for my technical presentation at National Symposium SANSARG-2K9, Visakhapatnam.
Member of Institute of Electrical and Electronics Engineers (IEEE).
Member of IEEE Electron Devices Society.
Single Electron Transistors
Compound Nanowires for Electronic Applications
Recent Research from Each Project
Trade-off between quantum capacitance and thermodynamic stability of defected graphene: an implication for supercapacitor electrodes.
Brief: In this work, the nitrogen doping profile needed to be followed at the defect site of defected graphene has been analyzed to maintain a trade-off between CQ and stability.
Acridinium based Organic Molecular Single Electron Transistor for High Performance Switching Application.
IEEE Transactions on Nanotechnology
Brief: This work proposes a low power organic single electron transistor based on Acridinium quantum dot - a derivative of acene series molecule Anthracene.
Transport Phenomenon in Boron–GroupV Linear Atomic Chains Under Tensile Stress for Nanoscale Devices and Interconnects: First Principles Analysis.
IEEE Transactions on Electron Devices
Brief: The Boron-groupV (BN, BP, BAs, BSb) compound linear atomic chain nanowires analyzed under tensile stress for their possible application in electronics.
Graphene oxide supported Pd-Fe nanohybrid as an efficient electrocatalyst for proton exchange membrane fuel cells.
Int. Journal of Hydrogen Energy
Brief: The paper presents experimental realization as well as computational validation of the Graphene Oxide supported Pd-Fe Nanohybrid as novel catalyst for Proton Exchange Membrane Fuel Cells.